Abstract

This paper presents a new technique to improve performance in terms of low power dissipation of FinFET ring oscillator.5 stage ring oscillator have designed under the concept of FinFET technique. FinFET provides better performance than normal CMOS technology. The presentation of FinFET (FIN type field effect transistor) Technology has opened new parts in Nano-innovation. Arrangement of ultrathin fin enables suppressed short channel effects it is an appealing replacement to the single gate MOSFET by virtue of its superior electrostatic properties and comparative ease of manufacturability. Having reduction of short channel effects in submicron region and making transistors still scalable. Because of this reason, the small- length transistor can have a better intrinsic gain compared to the majority counterpart. Simulation results indicates that using FinFET technique to the ring oscillator having power dissipation of 0.135mwatt power and CMOS ring oscillator provides 0.232 mwatt. Ion current for CMOS ring oscillator is 10.632mA whereas FinFET Ring oscillator provides 0.381mA.