Abstract

Carbon nanotube based devices are foreseen as the vital candidates for fabricating high-performance logic blocks that can be operated in the sub 22nm regime. Unlike their silicon-based counterparts, these CNTFET devices can be operated without getting affected by short channel issues of downscaled technology. In this work, an analytic model based on surface potential of the ballistic planar CNTFET device is developed and a simulation study is carried out to examine the current-voltage characteristics of the device. The developed MATLAB model also investigates the stability of the device performance under the variation of CNT diameter and oxide thickness used for the device. The model generates optimal I-V characteristics of the device that possess a negligible off-state current even under an increase in temperature. The obtained current values are compared with the simulation results of the nanoHUB Fettoy simulator for the validation of the developed model. The characteristics demonstrate the compatibility of the device to design high-performance circuits.