Abstract

The theoretical estimation of dark and illumination characteristics of InGaAs quantum dot photo detector is developed and presented in this paper. The exact potential and energy profile of the Quantum Dot is computed by obtaining the solution of 3D Poisson and Schrodinger equations using Homotopy analysis. The dark current, photo current, responsivity, detectivity and efficiency of the model are calculated by considering the structural parameters Quantum Dot density, applied voltage, length of quantum dot array, number of quantum dot array, light intensity and temperature. The results obtained show that the dark current and photo current are strongly influenced by Quantum Dot density and applied voltage. The developed model is purely physics based one and overcomes the limitations of the existing analytical models. The model is validated by comparing the results obtained with the existing models.