Abstract

Generally, flash memory is a type of permanent memory for computers in which the contents can be reprocessed or erased electronically. Compared to programmable read-only memory that can erase electricity, operations on it can be performed on modules located in different locations. Flash memory is much less expensive than EEPROM, which is why it has become a dominant technology. Especially, in situations, this stable and long-term data retention is required. Its use is allowed in various cases like digital audio players, photo and video cameras, mobile phones and smartphones, and specialized Android applications on the memory card. Additionally, it is also used on USB flash drives, traditionally used to store and transfer information between computers. The proposed model provides enhancements to the storage capacity of various flash memory modules. In a saturation point, the proposed model achieved 93.03% of NOR Memory management, 89.31% of NAND Memory management, 94.25% of Ferroelectric RAM Memory management, and 94.53% of Magnetic RAM Memory management, 96.05% of Ovonic Unified Memory management and 96.16% of Salcogenide RAM Memory management.