Abstract

This paper presents the simulation study of characteristics of an 11nm Silicon Nanowire Field Effect Transistor. This architecture is applicable for ultra-scaled devices up to sub-11 nm technology nodes that employ silicon films of a few nm in thickness. The defining characteristics of ultrathin silicon devices such as Short Channel Effects and Quasi-Ballistic transport are considered in modelling the device. Device geometries play a very important role in short channel devices, and hence their impact on drain current is also analyzed by varying the silicon and oxide thickness. The proposed simulation model gives a detailed outlook on the characteristics of the nanowire device in the inversion regime.