vioft2nntf2t|tblJournal|Abstract_paper|0xf4ffcd7623000000aed3050001000100 In this paper, a 10T Static Random Access Memory bit cell is proposed to meet design specification for performance, stability, area and power consumption. In every state of SRAM cell designs low power and increased noise margin plays an important role. The conventional 6T SRAM cell is very much prone to noise during read operation. In order to overcome the Read SNM problem in the 6T SRAM cell designers have implemented many other SRAM configurations such as 8T, 9T, 10T. These SRAM cell configurations improve the read stability but increase the power consumption. We proposed a 10T SRAM cell which can solve all these problems by introducing the transmission gate and using stacking effect in the configuration. In this paper different SRAM cells analyzed on the basis of power and read stability and we proposed a 1-bit SRAM memory array using the proposed 10T SRAM bit cell that achieves cell stability, lower power consumption and lesser area. The proposed circuit was implemented in Mentor Graphics Design Architect, simulated using Mentor Graphics ELDO at supply voltage of 1.8V with the help of TSMC 180nm technology. Micro wind is used to draw layout of SRAM cells and peripherals.
T S Geethumol, K S Sreekala, P B Dhanusha
Saintgits College of Engineering, India
Static Random Access Memory, Static Noise Margin, Read Static Noise Margin, Power Consumption, 10T SRAM
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| Published By :
ICTACT
Published In :
ICTACT Journal on Microelectronics
( Volume: 3 , Issue: 1 , Pages: 337-344 )
Date of Publication :
April 2017
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206
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