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DRAIN CURRENT CHARACTERISTICS OF SILICON NANOWIRE FIELD EFFECT TRANSISTOR

Abstract This paper presents the simulation study of characteristics of an 11nm Silicon Nanowire Field Effect Transistor. This architecture is applicable for ultra-scaled devices up to sub-11 nm technology nodes that employ silicon films of a few nm in thickness. The defining characteristics of ultrathin silicon devices such as Short Channel Effects and Quasi-Ballistic transport are considered in modelling the device. Device geometries play a very important role in short channel devices, and hence their impact on drain current is also analyzed by varying the silicon and oxide thickness. The proposed simulation model gives a detailed outlook on the characteristics of the nanowire device in the inversion regime. Authors T S Arun Samuel, N Arumugam, A Shenbagavalli National Engineering College, India Keywords Nanowire Transistors, Drain Current Characteristics

Published By : ICTACT Published In : ICTACT Journal on Microelectronics ( Volume: 2 , Issue: 3 ) Date of Publication : October 2016 DOI : 10.21917/ijme.2016.0049