A NOVEL FINFET BASED APPROACH FOR THE REALIZATION OF TERNARY GATES

ICTACT Journal on Microelectronics ( Volume: 2 , Issue: 2 )

Abstract

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The Scaling of conventional Complementary Metal Oxide Semiconductors (CMOSs) has been facing problems such as short channel effect due to hot electron effect and leakage power. Fin Field Effect Transistor (FinFET) is considered as solution to this issue. Binary system occupies large area there for the circuit complexity is increasing on a VLSI chip and thus degrading the performance of binary system. Multi valued logic MVL is considered as solution to this issue. In this paper, to minimize short channel effect and reduce circuit complexity on a VLSI chip I have designed FinFET based ternary basic gates (T-NOT, ST-NAND, ST-NOR, ST-AND and ST-OR). FinFET is classified in to two types based on gate structure: 1) Short Gate FinFET (SG-FinFET) and 2) Independent Gate FinFET (IG-FinFET). The proposed ternary logic gates are design using SG-FinFET. Simulation is performed with Tanner EDA tool. The proposed design has achieved good reduction in the circuit element count.

Authors

Makani Nailesh Kishor1, Satish S. Narkhede2
Gujarat Technological University, India1, Pune Institute of Computer Technology, India2

Keywords

Fin Field Effect Transistor, Multi Valued Logic, Multi Valued Logic Gates, Ternary Gates

Published By
ICTACT
Published In
ICTACT Journal on Microelectronics
( Volume: 2 , Issue: 2 )
Date of Publication
July 2016
Pages
254-260

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