PERFORMANCE AND RELIABILITY ANALYSIS FOR VLSI CIRCUITS USING 45nm TECHNOLOGY
Abstract
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The objective of this research paper is to analyze and estimate the reliability of an inverter circuit and two CMOS gate interconnect circuit , a combination of two inverters connected with an RC model as an interconnect structure using cadence virtuoso tool utilizing at gpdk 45 nm technology. Reliability in terms of electronic circuit basically depends on hot-carrier injection, negative biasing temperature instability, positive biasing temperature instability and slightly due to the effect of time-dependent gate oxide breakdown. The inverter used in this work is without any load effect at output terminal and further a capacitive load has been applied at the output terminal. The reliability predictions are done by comparing power, delay and output voltage after a specific interval of time.

Authors
Navaid Zafar Rizvi, Herman Al Ayubi
Gautam Buddha University, India

Keywords
HCI, NBTI, PBTI, TDDB
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Published By :
ICTACT
Published In :
ICTACT Journal on Microelectronics
( Volume: 1 , Issue: 2 , Pages: 57-61 )
Date of Publication :
July 2015
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191
Full Text Views :
4

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