Abstract

Integrating quantum technology with CMOS offers advancements in manufacturing, assembly, and performance of quantum photonic devices. Traditional quantum detectors with macroscopic interconnects suffer from limited bandwidth and performance due to capacitance constraints and discrete component integration. We developed a quantum noise–limited monolithic electronic-photonic evolutionary agent with a quantum circuit detector, fabricated using a 250-nanometer bipolar CMOS process. The device’s footprint is 80 µm by 220 µm, and it integrates photonics and electronics on a single chip. The detector exhibits a 15.3 GHz 3-dB bandwidth with a maximum shot noise clearance of 12 dB and extends shot noise clearance up to 26.5 GHz, measured with a 9-dB-mW power local oscillator. The integration approach reduces capacitance limitations and surpasses the performance of traditional macroscopic quantum detectors.

Authors

J. Jaganpradeep¹, J. Rajalakshmi², V. Arun Antony³, T. Priya⁴
SSM College of Engineering, India¹, Sethu Institute of Technology, India², Excel Engineering College, India³, NPR College of Engineering and Technology, India⁴

Keywords

CMOS Integration, Quantum Technology, Electronic-Photonic Integration, Quantum Noise-Limited Detectors, Bandwidth Performance