Abstract

The proliferation of portable electronics imposes a pressing need on design of low power circuits. Sub threshold circuits are the ideal candidate for design of ultra low power circuit. However, this ultra low power consumption is achieved by MOSFET based sub threshold circuits at the cost of deteriorated performance and exacerbated variability. According to International Technology Roadmap for Semiconductors (ITRS) FinFET and CNFET are the promising alternatives to MOSFET. This paper, therefore investigates the performance of sub threshold Voltage Controlled Oscillator (VCO) designed using Double Gate-FinFET (DG FinFET) and CNFET. Five stage DG FinFET based and CNFET Current Starved Voltage Controlled Oscillator (CSVCO) is designed in HSPICE and simulation results are analyzed. The results indicate that CNFET oscillator exhibits better PDP compared to DG-FinFET CSVCO by 89.11% at 200mv supply voltage. Also, the variability analysis shows that CNFET VCO is more robust to process and temperature variations compared to DG FinFET VCO and is therefore an adequate choice for weak inversion region.

Authors

Shridhar S. Khule,Rupali A. Walunj
Savitribai Phule Pune University, India

Keywords

Current Starved VCO (CSVCO), FinFET, Carbon Nano Tube Field Effect Transistors (CNFET), Power Delay Product (PDP), Energy Delay Product (EDP), Energy Efficiency