Abstract
vioft2nntf2t|tblJournal|Abstract_paper|0xf4ff3297280000004f5c020001000800
In the field of new technologies for energy, solar photovoltaic in submicron technology is becoming an axis of development industrially important. In this paper, we present the results of the study of the influence of silicon thickness TSi on the characteristics of a solar cell based to silicon and in submicron technology using the 2D-Atlas SILVACO software. We simulate the Current-Voltage (I-V) and Power-Voltage (P-V) characteristics as a function of silicon thickness in the range of 120nm to 900nm at room temperature and under global AM1.5G illumination spectra. Then we calculate the values of the form factor FF for the different values of the silicon thickness. The simulation results show that the solar cell in silicon without defect and in submicron technology is characterized by good electrical characteristics and high performance.
Authors
Mourad Hebali1, Mohammed Barka2, Abdelkader Baghdad Bey3, Miloud Abboun Abid4, Miloud Abboun Abid5, Mohammed Benzohra6, Djilali Chalabi7, Abdelkader Saidane8
Ecole Nationale Polytechnique d’Oran Maurice Audin, Algeria1,4,6,7, University of Mascara, Algeria2,3,5
Keywords
Moore Law, TSMC 180nm, 130nm, 32nm, Mentor Graphics, HSPICE, Physical Verification, DRC, LVS, PEX