DESIGN AND SIMULATION OF LOW ACTUATION VOLTAGE PERFORATED RF MEMS SWITCH
Abstract
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RF MEMS switch is widely used for area of communication circuits systems and it enables identification of micro size mechanical switches entrenched in electronics devices. The IC Technology for improving performance compatibility mandatory the low actuation voltages switches in RF application and microelectronics mechanical system. The MEMS technology is reduced the actuation voltages, spring constant, and squeezes film damping. The Fixed-fixed beam is capacitive shunt type switch. The shunt switch useful at the higher frequencies, it’s reduced the parasitic and increased RF power. Fixed – Fixed beam is element that fixed at both end. The electrostatic actuation process is used to pull down the beam towards electrode. The electrostatically process is low power consumption process with higher flexibility displacement output. The paper explains the concept of low of actuation voltage, higher flexibility; lower the squeeze film damping, higher switching speed. The serpentine square flexures or meanders are used to get higher displacement of switch. These all requirement are achieved by using perforation technique in switch. The various type perforated switch is designed and simulated. The comparative study of perforated RF MEMS switch has been done in this research paper. The perforation size 1µm-4µm is used in switch. The comparison analysis has been done with design and simulation of switch. For designing and simulation of switch we have used the software- COMSOL® MULTIPHYSICS 4.3b.

Authors
Ankur Saxena, Vimal Kumar Agrawal
Apex Institute of Engineering and Technology, India

Keywords
Fixed-Fixed Beam, Material, Meanders, Electrostatic, Low Actuation Voltage
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Published By :
ICTACT
Published In :
ICTACT Journal on Microelectronics
( Volume: 1 , Issue: 1 , Pages: 19-22 )
Date of Publication :
February 2015
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102
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2

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