Abstract

The present paper introduces a simulation model for the drain-current (I-V) characteristics of a submicron GaAs MESFET. This simulation takes into account different electrical and physical parameters as well as the charge distribution in the device active region. In addition, the simulation includes the doping profile and device parameters effects on the ID-VDS characteristic curves for an ion implanted channel MESFET. The temperature effect on device drain current is evidenced and plotted for different biasing conditions. The GaAs MESFET I-V characteristics versus gate length and temperature variations are measured and plotted and then discussed. The simulation results are compared to that published in literature.