vioft2nntf2t|tblJournal|Abstract_paper|0xf4ffe3322c00000043c8000001000e00 At the current deep submicron and nanometer level, the leakage power is becoming the major contributor to overall power consumption in modern VLSI circuits. This research paper presents a novel approach to reducing leakage power by inserting two leakage transistors in the middle of pull-down and pull-up paths. Out of these two leakage transistors, one is the PMOS transistor, and another one is the NMOS transistor. This research work presents a dynamic CMOS inverter and 6T SRAM cell with and without transmission gate (TG) to reduce leakage power using the LECTOR and LECTOR-B techniques. The Cadence Virtuoso simulation tool is used to presents the results in terms of static power. Using the 45-nm technology node, the performance in terms of static power is analyzed. It is observed that using LECTOR and LECTOR-B techniques, the overall reduction in static power is 26% and 20%, respectively, compared to the conventional design for SRAM cell. Similar improvements are also noted for dynamic CMOS inverter and TG SRAM cell.
Vivek Harshey1,Pankaj Kumar Das2, Shivani Sharma3
Sant Longowal Institute of Engineering and Technology, India1,Sant Longowal Institute of Engineering and Technology, India2, Dr. B.R. Ambedkar National Institute of Technology, India3
Dynamic CMOS Inverter, SRAM Cell, Leakage Power, LECTOR, LECTOR-B Technique
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| Published By :
ICTACT
Published In :
ICTACT Journal on Microelectronics
( Volume: 7 , Issue: 4 , Pages: 1221-1226 )
Date of Publication :
January 2022
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