Abstract

In this brief, we have done a comparative study of Single Metal Gate Junctionless Accumulation Mode Nanowire FET (SMG-JAM-NWFET) and Dual Metal Gate Junctionless Accumulation Mode Nanowire FET (DMG-JAM-NWFET) for their immunity against the trap induced charges. It is so found that the DMG-JAM-NWFET poses much higher immunity against the trap charges as compared to the conventional SMG-JAM-NWFET in terms of much lower change in the potential, current, transconductance and output conductance. Aberration in other parameters like drain characteristics, Subthreshold Slope, capacitances and cut-off frequency has also been studied deeply. It is so found that the DMG-JAM-NWFET poses much higher immunity against the trap charges as compared to the conventional SMG-JAM-NWFET in terms of much lower change in the aforesaid parameters. It is so because of the impact ionization effect, the resistance to trap charges in DMG-JAM-NWFET is much higher than SMG-JAM-NWFET.