vioft2nntf2t|tblJournal|Abstract_paper|0xf4ff9c222c0000005f980a0001000300 In this brief, we have done a comparative study of Single Metal Gate Junctionless Accumulation Mode Nanowire FET (SMG-JAM-NWFET) and Dual Metal Gate Junctionless Accumulation Mode Nanowire FET (DMG-JAM-NWFET) for their immunity against the trap induced charges. It is so found that the DMG-JAM-NWFET poses much higher immunity against the trap charges as compared to the conventional SMG-JAM-NWFET in terms of much lower change in the potential, current, transconductance and output conductance. Aberration in other parameters like drain characteristics, Subthreshold Slope, capacitances and cut-off frequency has also been studied deeply. It is so found that the DMG-JAM-NWFET poses much higher immunity against the trap charges as compared to the conventional SMG-JAM-NWFET in terms of much lower change in the aforesaid parameters. It is so because of the impact ionization effect, the resistance to trap charges in DMG-JAM-NWFET is much higher than SMG-JAM-NWFET.
Deepak Kumar1, Shamsher Singh2
Maharshi Dayanand University, India1, Maharshi Dayanand University, India2
Immunity, Trap Charges, Junctionless Accumulation Mode, Drain Current, Transconductance Nanowire FET
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| Published By :
ICTACT
Published In :
ICTACT Journal on Microelectronics
( Volume: 7 , Issue: 3 , Pages: 1209-1215 )
Date of Publication :
October 2021
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