Abstract

A hybrid bistable semiconductor laser structure consisting of an edge-emitting laser as a gain region and a vertical cavity laser as an absorber region, which translates lateral emission to vertical emission is analyzed. The device is modeled using appropriately modified rate equations and simulated using PSPICE circuit simulator. The dc sweep exhibits bistability. The hysterisis width of the bistable characteristics is found to depend on the reverse dc sweep, source resistance, and temperature. It is also noticed that the threshold currents and the hysterisis width can be controlled by the physical dimensions of gain and absorber regions and the driver circuit parameters. Turn-on delay decreases as the input current is increased.