vioft2nntf2t|tblJournal|Abstract_paper|0xf4ffc9772b0000002042030001000200
In high-speed networks and applications of wireless communication systems, the wideband data transmission system needs to receive the signal with low noise and low power. The Low Noise Amplifier (LNA) improves the signal strength and amplify the signal at the receiver side to reduce the noise and also must work in the high speed switching activity. In the paper work, a low power and low noise with inductorless active and passive model of trans-conductance (Gm) enhancement system in the 22nm CMOS technology. By using this type of CMOS technology, it reduces the power consumption due to the update channel width and circuit design of Gm enhancement. This paper also highlights in the reduction of overall area consumption with the alignment and other connectivity of amplifier. This amplifier was tested in both e-band and w-band operating frequencies to validate the noise level in high frequency applications. The result analysis and comparison chart shows the performance level of proposed LNA model than other state-of-art models.