vioft2nntf2t|tblJournal|Abstract_paper|0xf4ff70572b0000007fe6020001000300 This paper deals with a novel Double Gate MOSFET (DG MOSFET) which is constructed by the unification of III group materials (Indium, Gallium) and V group materials (Phosphide, Arsenide) is analyzed. Due to its short channel effect immunization, leakage current reduction and higher scaling potential, DG MOSFET as one of the most comforting devices for low power applications. In this work, we investigated the effect of DG MOSFET based on Indium Phosphide (InP) and Gallium Arsenide (GaAs) on optimal performance and drain current characteristics by replacing traditional DG MOSFET based on silicon. The transistor’s channel length is set to 20 nm. Both devices have been modeled using the NanoHub simulator and characteristics has been examined using Matlab. The descriptive analysis of characteristics has been performed through the corresponding plot structures - energy band structure, ID vs VGS characteristics, ID vs VGS characteristics, transconductance. From the results provided, it has been found that the DG MOSFET device based on InP offers ON current 10-3A is better than the DG MOSFET device based on Silicon and Gallium Arsenide (GaAs).
A Sharon Geege1, P Vimala2, T S Arun Samuel3, N Arumugam4
National Engineering College, India1,3,4, Dayananda Sagar College of Engineering, India2
DG MOSFET, GaAs, InP, ON Current, OFF Current
| January | February | March | April | May | June | July | August | September | October | November | December |
| 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 1 | 0 |
| Published By :
ICTACT
Published In :
ICTACT Journal on Microelectronics
( Volume: 5 , Issue: 4 , Pages: 876-879 )
Date of Publication :
January 2020
Page Views :
251
Full Text Views :
1
|