vioft2nntf2t|tblJournal|Abstract_paper|0xf4ff98cf290000004868010001000700 The present paper introduces a simulation model for the drain-current (I-V) characteristics of a submicron GaAs MESFET. This simulation takes into account different electrical and physical parameters as well as the charge distribution in the device active region. In addition, the simulation includes the doping profile and device parameters effects on the ID-VDS characteristic curves for an ion implanted channel MESFET. The temperature effect on device drain current is evidenced and plotted for different biasing conditions. The GaAs MESFET I-V characteristics versus gate length and temperature variations are measured and plotted and then discussed. The simulation results are compared to that published in literature.
M Djouder, A Benfdila, A Lakhlef
Mouloud Mammeri University of Tizi-Ouzou, Algeria
GaAS, MESFET, Simulation, I-V Characteristics, Silvaco, Doping Profile, submicron MESFET
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| Published By :
ICTACT
Published In :
ICTACT Journal on Microelectronics
( Volume: 4 , Issue: 4 , Pages: 705-709 )
Date of Publication :
Januray 2019
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166
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