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DESIGN AND IMPLEMENTATION OF LOW-NOISE AMPLIFIER FOR ULTRA-WIDEBAND RECEIVER IN 180nm CMOS TECHNOLOGY
Abstract
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This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) using two stage cascading topology to obtain high gain. Inductive degeneration and peaking inductor techniques are used to obtain wideband matching and flatness of gain. The proposed UWB LNA is implemented by using 180nm based CMOS TSMC technology using Advanced Design System (ADS) software.LNA achieves maximum gain of 15.5 dB, minimum noise figure of 2.88 dB, -6 dBm of IIP3 and wideband input matching in the UWB frequency range of 3.1 GHz to 10.6 GHz. The proposed LNA provides group delay of 60 ps and isolation of less than 25 dB under the 1.8 V DC power supply.

Authors
Neelam Gautam, Manish Kumar, Abhay Chaturvedi
GLA University Mathura, India

Keywords
CMOS, UWB, Gain, Noise Figure, Isolation
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Published By :
ICTACT
Published In :
ICTACT Journal on Microelectronics
( Volume: 1 , Issue: 2 , Pages: 68-71 )
Date of Publication :
July 2015
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