In the rapidly evolving landscape of modern electronics, memory devices and circuits play a pivotal role in determining system performance, energy efficiency, and scalability. Traditional memory technologies, such as Dynamic Random Access Memory (DRAM) and NAND flash, face challenges related to scaling limits, latency, power consumption, and endurance, particularly as demands for faster and more efficient data storage grow. Emerging non-volatile memory (NVM) technologies like Resistive Random Access Memory (ReRAM), Phase-Change Memory (PCM), and Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) offer potential solutions to these challenges, but their combination into existing systems poses design and manufacturing hurdles. The primary problem lies in balancing storage performance with power efficiency while ensuring scalability for advanced applications such as artificial intelligence (AI), Internet of Things (IoT), and high-performance computing (HPC). Innovations in circuit design, including advanced error-correction mechanisms, adaptive voltage scaling, and low-power architectures, are critical in enhancing the overall performance of memory systems. This study employs a hybrid approach, combining novel circuit design techniques with the combination of emerging NVM technologies. Simulations were performed to evaluate the performance metrics, including write latency, energy consumption, and endurance. Results show that ReRAM-based memory designs achieved a 35% reduction in write latency and a 50% improvement in energy efficiency compared to traditional DRAM, while PCM demonstrated superior endurance with up to 10^8 write cycles. Furthermore, STT-MRAM circuits showed promise with a 40% reduction in standby power consumption. These advancements in memory circuits and devices highlight the potential for significant improvements in storage performance and efficiency, addressing the growing needs of modern electronic systems and paving the way for future innovations in computing.
B. Puviyarasi1, R. Nagesh2, M. Prakash3, S.G. Prasanna Kumara4
Sri Sairam Engineering College, India1, Government Sri Krishnarajendra Silver Jubilee Technological Institute, India2, Builders Engineering College, India3, Government Science College, Hassan, India4
Non-Volatile Memory, Energy Efficiency, Storage Performance, Memory Circuits, Scalability
| January | February | March | April | May | June | July | August | September | October | November | December |
| 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| Published By :
ICTACT
Published In :
ICTACT Journal on Microelectronics
( Volume: 10 , Issue: 3 , Pages: 1862 - 1870 )
Date of Publication :
October 2024
Page Views :
3
Full Text Views :
|