vioft2nntf2t|tblJournal|Abstract_paper|0xf4ff25f119000000eb8b030001000400
The Ultra-wideband Transceiver systems are finding their mammoth existence with the mobile communication evolutions. The use of CMOS can not only miniaturized the system but also is designed to reduce convincingly overall thermal imprint and RF power consumption [1]. Nevertheless utilization of silicon as is traditional in the high-frequency Low Noise Amplifier market for short range products such as Bluetooth and WiFi, but this smart material faces a real confrontation for the signal amplification needed for longer-range mobile phone transmissions. This work focuses on the Integration of the CMOS LNA with F – Inverted Antenna for wide range of frequency. An F-Inverted Compact Antenna using standard commercial TSMC 90µm CMOS process technology is introduced. A Co-design of this Electromagnetic Radiator combined with a two-stage LNA including impedance matching network is implemented. This co-design allows a gain of more than 20 dB at 5GHz operational frequency with considerable limited on-chip area occupation. The simulation results indicate that at 5GHz with 2.5V signal, low noise amplifier has achieved power gain of 22dB, 1dB compression power output (P-1) of 13.2dBm and maximum power added efficiency (PAE) of 45.2% with power consumption of 17mW.